رشد تک بلور نیمرساناهای دوتایی PbSe, PbTe, CdSe, CdTe و تعیین پارامترهای ساختاری و الکتریکی آنها

Si ng le c rys t als o f bin a ry semico ndu c to rs CdTc,CdSe. PhTe and PbSe were grown by sublimat ion and condensa tion techniq ues usi ng argon as the carri e r gas. Powder X-ray di ffractomet ry as wel l as La ue mClhod wcre employed fo r the stru ct ura l a na lysis. By usi ng Ha ll techniq ue. the de nsity and polarity of charge car rie rs we re de te rmined in single crysta ls. PbTc and PbSc c rys ta ls were grown as p-type wit h charge densi ty of about l.l x1Q 18 em·3 whereas CdTc and CdSe were grown as intrinsic. Thcrmo * elcctric technique was also uliliscd to dc le rmine the e nergy gap of single and polycrystals of CdTc and CdSc.